FCP11N60F
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
Inventory:6,079
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Part Number : FCP11N60F
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Package/Case : TO-220-3
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Brands : onsemi
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Components Categories : MOSFET
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Datesheet : FCP11N60F DataSheet (PDF)
Overview of FCP11N60F
SuperFET® MOSFET is a first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 320mΩ
- Fast recovery type ( trr = 120ns )
- Ultra low gate charge ( Typ. Qg = 40nC )
- Low effective output capacitance ( Typ. Coss.eff = 95pF )
- 100% avalanche tested
- RoHS compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 11 A |
Rds On - Drain-Source Resistance | 380 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 52 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
Tradename | SuperFET FRFET | Series | FCP11N60F |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 56 ns | Forward Transconductance - Min | 9.7 S |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 98 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | N-Channel MOSFET |
Typical Turn-Off Delay Time | 119 ns | Typical Turn-On Delay Time | 34 ns |
Width | 4.7 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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