FCP22N60N
2N60N, MOSFET, N-channel, TO-220, Tube
Inventory:6,141
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Part Number : FCP22N60N
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Package/Case : TO-220-3
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Brands : onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FCP22N60N DataSheet (PDF)
Overview of FCP22N60N
The SupreMOS® MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Key Features
- BVDSS = 650V @ TJ = 150°C
- RDS(on) = 140mΩ ( Typ.) @ VGS = 10V, ID = 11A
- Ultra low gate charge ( Typ. Qg = 45nC )
- Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
- 100% avalanche tested
- RoHS compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 22 A |
| Rds On - Drain-Source Resistance | 140 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 45 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 205 W | Channel Mode | Enhancement |
| Tradename | SupreMOS | Series | FCP22N60N |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 4 ns | Forward Transconductance - Min | 22 S |
| Height | 16.3 mm | Length | 10.67 mm |
| Product Type | MOSFET | Rise Time | 16.7 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | SupreMOS |
| Typical Turn-Off Delay Time | 49 ns | Typical Turn-On Delay Time | 16.9 ns |
| Width | 4.7 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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