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FCP067N65S3

4 A 650 V Power MOSFET TO-220

Inventory:8,918

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Overview of FCP067N65S3

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

Key Features

  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 78 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.)= 715 pF)
  • Optimized Capacitance
  • Typ. RDS(on) = 59 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

Application

  • Telecommunication
  • Cloud system
  • Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 44 A Rds On - Drain-Source Resistance 67 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 78 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 312 W
Channel Mode Enhancement Tradename SuperFET III
Series FCP067N65S3 Brand onsemi / Fairchild
Configuration Single Fall Time 16 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 52 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 89 ns
Typical Turn-On Delay Time 26 ns Width 4.7 mm
Unit Weight 0.068784 oz

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