• FCA47N60 TO-3P-3,SC-65-3
FCA47N60 TO-3P-3,SC-65-3

FCA47N60

650V SUPER FET MOSFET FCA47N60

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  • Part Number : FCA47N60

  • Package/Case : TO-3P-3,SC-65-3

  • Brands : onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FCA47N60 DataSheet (PDF)

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Overview of FCA47N60

The FCA47N60 is a high-voltage, high-current IGBT power transistor designed for use in power electronic applications where high efficiency and reliability are essential. This transistor offers a low saturation voltage and fast switching characteristics, making it suitable for various power conversion and motor control systems.

Pinout

(Note: The pin configuration provided below is a general representation. Refer to the specific datasheet for accurate details.)

  • Collector(C): Terminal for current input
  • Emitter(E): Terminal for current output
  • Gate(G): Terminal for controlling the transistor
  • Collector(C): Terminal for current input
  • Emitter(E): Terminal for current output
  • GND: Ground connection
  • VCC: Voltage supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FCA47N60 IGBT for a visual representation.

Key Features

  • High Voltage and Current Capability: The FCA47N60 can handle high voltages and currents, making it suitable for power applications.
  • Low Saturation Voltage: Offers low saturation voltage for improved efficiency in switching operations.
  • Fast Switching Speed: Provides fast switching characteristics, enabling rapid transitions in power circuits.
  • High Reliability: Designed for reliable operation in demanding environments, ensuring long-term performance.
  • Thermal Protection: Includes thermal protection features to prevent overheating and ensure safe operation.

Note: For detailed technical specifications, please refer to the FCA47N60 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC to AC power.
  • Motor Drives: Suitable for motor drive applications in industrial and automotive systems.
  • Switching Power Supplies: Used in switching power supply circuits for efficient power conversion.

Functionality

The FCA47N60 is a high-voltage, high-current IGBT transistor that provides efficient power switching capabilities for various applications requiring high-power handling.

Usage Guide

  • Power Connection: Connect the collector and emitter terminals to the power source as per the circuit requirements.
  • Gate Control: Apply appropriate voltage signals to the gate terminal for controlling the switching of the transistor.
  • Thermal Management: Ensure proper heat sinking and thermal management to maintain optimal operating temperatures.

Frequently Asked Questions

Q: Is the FCA47N60 suitable for high-frequency applications?
A: Yes, the FCA47N60 offers fast switching speeds, making it suitable for high-frequency operations.

Equivalent

Explore these alternatives with similar functionalities to the FCA47N60:

  • FCA50N60: A higher-rated version of the FCA series offering increased power handling capabilities.
  • IRG4BC30: An IGBT transistor from Infineon with comparable specifications and performance characteristics.

FCA47N60

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-3PN-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 47 A
Rds On - Drain-Source Resistance 70 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 270 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 417 W Channel Mode Enhancement
Tradename SuperFET Series FCA47N60
Brand onsemi / Fairchild Configuration Single
Fall Time 75 ns Forward Transconductance - Min 40 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 210 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Type N-Channel MOSFET
Typical Turn-Off Delay Time 520 ns Typical Turn-On Delay Time 185 ns
Width 5 mm Unit Weight 0.162260 oz

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