SPA11N60CFD
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $3.434 | $3.43 |
10 | $3.031 | $30.31 |
30 | $2.792 | $83.76 |
100 | $2.549 | $254.90 |
500 | $2.438 | $1,219.00 |
1000 | $2.387 | $2,387.00 |
Inventory:6,344
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Part Number : SPA11N60CFD
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Package/Case : TO-220FP-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : SPA11N60CFD DataSheet (PDF)
Overview of SPA11N60CFD
Whether used in power supplies, motor controls, or other electronic devices, the SPA11N60CFD is a versatile component that delivers consistent performance. Its N-channel design allows for efficient current flow and control, making it suitable for a wide range of circuit designs. With its TO-220 package, this transistor is easy to install and maintain
Key Features
- New revolutionary high voltage technology
- Intrinsic fast-recovery body diode
- Extremely low reverse recovery charge
- Ultra low gate charge
- Extreme dv /dt rated
- High peak current capability
- Periodic avalanche rated
- Qualified according to JEDEC0) for target applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | SPA11N60CFD | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Not Recommended |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Infineon | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 340 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (Abs) (ID) | 11 A | Drain Current-Max (ID) | 11 A |
Drain-source On Resistance-Max | 0.44 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 33 W |
Pulsed Drain Current-Max (IDM) | 28 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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