SPP11N60C3
MOSFET N-Ch 600V 11A TO220-3 CoolMOS C3
Inventory:5,548
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Part Number : SPP11N60C3
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Package/Case : TO-220-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : SPP11N60C3 DataSheet (PDF)
Overview of SPP11N60C3
N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | SPP11N60C3 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Infineon | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 340 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (Abs) (ID) | 11 A |
Drain Current-Max (ID) | 11 A | Drain-source On Resistance-Max | 0.38 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 125 W | Pulsed Drain Current-Max (IDM) | 33 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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