SI1563DH-T1-E3
VISHAY - SI1563DH-T1-E3 - MOSFET, DUAL, NP, 6-SC-70
Inventory:8,252
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Part Number : SI1563DH-T1-E3
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Package/Case : SOT23-70
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Brands : VISHAY
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Components Categories : FET, MOSFET Arrays
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Datesheet : SI1563DH-T1-E3 DataSheet (PDF)
Overview of SI1563DH-T1-E3
MOSFET, DUAL, NP, 6-SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.28A; Drain Source Voltage Vds:20V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:740mW; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:1.13A; Package / Case:SC-70; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
Key Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Tradename | TrenchFET |
| Series | SI1 | Brand | Vishay / Siliconix |
| Product Type | MOSFET | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Part # Aliases | SI1563DH-E3 |
| Unit Weight | 0.000265 oz |
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