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RS6G120BGTB1

Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP

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Overview of RS6G120BGTB1

N-Channel 40 V 120A (Tc) 104W (Tc) Surface Mount 8-HSOP

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.34mOhm @ 90A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 20 V Power Dissipation (Max) 104W (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSOP Package / Case HSOP-8
Base Product Number RS6G Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 210 A Rds On - Drain-Source Resistance 1.34 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 67 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 104 W
Channel Mode Enhancement Brand ROHM Semiconductor
Fall Time 98 ns Moisture Sensitive Yes
Product Type MOSFET Rise Time 24 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 90 ns
Typical Turn-On Delay Time 24 ns Part # Aliases RS6G120BG

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