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RS1G120MNTB

N-Channel 40 V 12A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

Inventory:6,670

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Overview of RS1G120MNTB

Power Field-Effect Transistor, 12A I(D), 40V, 0.0207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16.2mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 20 V Power Dissipation (Max) 3W (Ta), 25W (Tc)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSOP Package / Case HSOP-8
Base Product Number RS1G Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 20.7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 9.4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 25 W Channel Mode Enhancement
Brand ROHM Semiconductor Configuration Single
Fall Time 3.2 ns Forward Transconductance - Min 4 S
Height 1.1 mm Length 5.8 mm
Product MOSFETs Product Type MOSFET
Rise Time 4.3 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-channel
Type Power MOSFET Typical Turn-Off Delay Time 23.8 ns
Typical Turn-On Delay Time 9.7 ns Width 5 mm
Part # Aliases RS1G120MN Unit Weight 0.027197 oz

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