RS1E220ATTB1

Name: RS1E220ATTB1
Brand: Rohm Semiconductor
Rating: 4.5 (10 reviews)

MOSFET -30V P-CHANNEL -76A

Inventory:5,907

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P-Channel 30 V 22A (Ta), 76A (Tc) 3W (Ta) Surface Mount 8-HSOP

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status	Active	FET Type	P-Channel
Technology	Si	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 76A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 22A, 10V	Vgs(th) (Max) @ Id	2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5850 pF @ 15 V	Power Dissipation (Max)	3W (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Supplier Device Package	8-HSOP	Package / Case	HSOP-8
Base Product Number	RS1E	Manufacturer	ROHM Semiconductor
Product Category	MOSFET	RoHS	Details
REACH	Details	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	76 A
Rds On - Drain-Source Resistance	4.1 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	130 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	34 W	Channel Mode	Enhancement
Brand	ROHM Semiconductor	Configuration	Single
Fall Time	140 ns	Product Type	MOSFET
Rise Time	40 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	260 ns	Typical Turn-On Delay Time	25 ns
Part # Aliases	RS1E220AT	Unit Weight	0.027197 oz

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