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RQ3G110ATTB

Trans MOSFET P-CH 40V 11A 8-Pin HSMT EP T/R

Quantity Unit Price(USD) Ext. Price
1 $0.744 $0.74
200 $0.290 $58.00
500 $0.278 $139.00
1000 $0.274 $274.00

Inventory:7,112

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for RQ3G110ATTB or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of RQ3G110ATTB

P-Channel 40 V 11A (Ta), 35A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.4mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2750 pF @ 20 V Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3) Package / Case HSMT-8
Base Product Number RQ3G110 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 35 A Rds On - Drain-Source Resistance 12.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 46 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20 W
Channel Mode Enhancement Brand ROHM Semiconductor
Configuration Single Fall Time 75 ns
Product Type MOSFET Rise Time 41 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type Power MOSFET Typical Turn-Off Delay Time 130 ns
Typical Turn-On Delay Time 14 ns Part # Aliases RQ3G110AT

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