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RQ3E120ATTB

P-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT ROHM RQ3E120ATTB

Quantity Unit Price(USD) Ext. Price
1 $0.309 $0.31
10 $0.272 $2.72
30 $0.255 $7.65
100 $0.235 $23.50
500 $0.199 $99.50
1000 $0.193 $193.00

Inventory:5,941

*The price is for reference only.
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Overview of RQ3E120ATTB

MOSFET, P-CH, -30V, -39A, HSMT; Transistor Polarity: P Channel; Continuous Drain Current Id: -39A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0061ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 20W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3) Package / Case HSMT-8
Base Product Number RQ3E120 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 39 V Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 61 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 62 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand ROHM Semiconductor Configuration Single
Fall Time 95 ns Height 0.85 mm
Length 3 mm Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 140 ns Typical Turn-On Delay Time 20 ns
Width 2.4 mm Part # Aliases RQ3E120AT
Unit Weight 0.008517 oz

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