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RQ3L090GNTB

MOSFET Nch 60V 30A Middle Power MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.614 $0.61
200 $0.238 $47.60
500 $0.230 $115.00
1000 $0.225 $225.00

Inventory:6,793

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for RQ3L090GNTB or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of RQ3L090GNTB

N-Channel 60 V 9A (Ta), 30A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.7V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 30 V Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3) Package / Case HSMT-8
Base Product Number RQ3L090 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 13.9 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.3 V Qg - Gate Charge 24.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 20 W Channel Mode Enhancement
Brand ROHM Semiconductor Configuration Single
Fall Time 14 ns Product Type MOSFET
Rise Time 14 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 41 ns Typical Turn-On Delay Time 16 ns
Part # Aliases RQ3L090GN

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