• packageimg
packageimg

RQ3E180BNTB

MOSFET 4.5V Drive Nch MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.611 $0.61
200 $0.244 $48.80
500 $0.237 $118.50
1000 $0.232 $232.00

Inventory:8,121

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for RQ3E180BNTB or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of RQ3E180BNTB

N-Channel 30 V 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 15 V Power Dissipation (Max) 2W (Ta), 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3) Package / Case HSMT-8
Base Product Number RQ3E180 Manufacturer ROHM Semiconductor
Product Category MOSFET REACH Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 39 A Rds On - Drain-Source Resistance 2.8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 72 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20 W
Channel Mode Enhancement Brand ROHM Semiconductor
Configuration Single Fall Time 79 ns
Product Type MOSFET Rise Time 63 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 138 ns
Typical Turn-On Delay Time 14 ns Part # Aliases RQ3E180BN
Unit Weight 0.011454 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

RQ3C150BCTB

RQ3C150BCTB

MOSFET Pch -20V -30A Si MOSFET
RQ3E120ATTB

RQ3E120ATTB

P-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT ROHM RQ3E120ATTB
RQ3E150GNTB

RQ3E150GNTB

MOSFET 4.5V Drive Nch MOSFET
RQ3P300BHTB1

RQ3P300BHTB1

Trans MOSFET N-CH 100V 39A 8-Pin HSMT EP T/R
RQ3L090GNTB

RQ3L090GNTB

MOSFET Nch 60V 30A Middle Power MOSFET
RQ3L050GNTB

RQ3L050GNTB

MOSFET Nch 60V 12A Si MOSFET
RQ3L050GN

RQ3L050GN

Nch 60V 13A Power MOSFET
RQ5C030TPTL

RQ5C030TPTL

MOSFET MOSFET WITH G-S PROTECTION DIO