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RQ3E080BNTB

Nch 30V 15A Power MOSFET

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Overview of RQ3E080BNTB

Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3) Package / Case HSMT-8
Base Product Number RQ3E080 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 11 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 14.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand ROHM Semiconductor Configuration Single
Fall Time 7 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-channel
Part # Aliases RQ3E080BN

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