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NTR3A052PZT1G

MOSFET PFET SOT23 20V 52MO

Quantity Unit Price(USD) Ext. Price
1 $0.365 $0.36
10 $0.275 $2.75
30 $0.238 $7.14
100 $0.190 $19.00
500 $0.169 $84.50
1000 $0.154 $154.00

Inventory:8,582

*The price is for reference only.
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Please submit RFQ for NTR3A052PZT1G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NTR3A052PZT1G

MOSFET, P-CH, -20V, -3.3A, 0.75W, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 720mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Key Features

  • Leading −20 V Trench for Low RDS(on)
  • −1.8 V Rated for Low Voltage Gate Drive
  • RoHS Compliant

Application

  • Power Load Switch

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 3.6 A
Rds On - Drain-Source Resistance 47 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 400 mV Qg - Gate Charge 11.9 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 860 mW Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 42 ns Forward Transconductance - Min 16 S
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 8 ns Unit Weight 0.000282 oz

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