• NTJD4105CT1G SC88-6
NTJD4105CT1G SC88-6

NTJD4105CT1G

SOT-363-6 MOSFETs ROHS

Quantity Unit Price(USD) Ext. Price
5 $0.106 $0.53
50 $0.095 $4.75
150 $0.089 $13.35
500 $0.084 $42.00
3000 $0.071 $213.00
6000 $0.069 $414.00

Inventory:7,637

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : NTJD4105CT1G

  • Package/Case : SC88-6

  • Brands : Onsemi

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : NTJD4105CT1G DataSheet (PDF)

Quick Inquiry

Please submit RFQ for NTJD4105CT1G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NTJD4105CT1G

MOSFET, N & P CH, 20V, 0.63A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 920mV; Power Dissipation Pd: 270mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

NTJD4105CT1G

Key Features

  • Complementary N and P Channel Device
  • Leading -8.0 V Trench for Low RDS(on) Performance
  • ESD Protected Gate-ESD Rating: Class 1
  • SC-88 Package for Small Footprint (2x2mm)

Application

  • DC-DC Conversion
  • Load/Power Switching
  • Single or Dual Cell Li-Ion Battery Supplied Devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity Complementary
Configuration Dual V(BR)DSS Min (V) 0
VGS Max (V) 12 VGS(th) Max (V) 1.5
ID Max (A) 0.63 PD Max (W) 0.27
RDS(on) Max @ VGS = 2.5 V (mΩ) N:445.0 , P:460.0 RDS(on) Max @ VGS = 4.5 V (mΩ) N: 375.0, P: 300
Qg Typ @ VGS = 4.5 V (nC) 0.9 Qg Typ @ VGS = 10 V (nC) 1.3
Ciss Typ (pF) N(20V):33, P(-8V): 160 Pricing ($/Unit) $0.102Sample

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

NTJD1155LT1G

NTJD1155LT1G

MOSFET with P-Channel configuration and built-in Level Shift for 8V and +/-1.3A requirements
NTS4101PT1G

NTS4101PT1G

Single P-Channel MOSFET designed for power applications with a voltage tolerance of -20V, a current handling capability of -1
NTR4502PT1G

NTR4502PT1G

ROHS compliant SOT-23 MOSFETs
NTMFS4C302NT1G

NTMFS4C302NT1G

30V 1.15MO MOSFET NFET SO8FL
NTMFS4C022NT1G

NTMFS4C022NT1G

Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
NTD4302T4G

NTD4302T4G

The NTD4302T4G MOSFET is a single N-Channel power component designed for high voltage and high current applications
NTD5806NT4G

NTD5806NT4G

NTD5806NT4G: 33A 40V 19mOhm NFET DPAK MOSFET
NTMFS4983NFT1G

NTMFS4983NFT1G

Low Power Dissipation of 1.7 Watts at Ambient Temperature