• NTJD1155LT1G SC-88-6 , SC-70-6 , SOT-363-6
NTJD1155LT1G SC-88-6 , SC-70-6 , SOT-363-6

NTJD1155LT1G

MOSFET with P-Channel configuration and built-in Level Shift for 8V and +/-1.3A requirements

Quantity Unit Price(USD) Ext. Price
1 $0.311 $0.31
10 $0.238 $2.38
30 $0.207 $6.21
100 $0.167 $16.70
500 $0.150 $75.00
1000 $0.139 $139.00

Inventory:9,748

*The price is for reference only.
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  • Part Number : NTJD1155LT1G

  • Package/Case : SC-88-6 , SC-70-6 , SOT-363-6

  • Brands : Onsemi

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : NTJD1155LT1G DataSheet (PDF)

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Overview of NTJD1155LT1G

The NTJD1155LT1G is an N-channel Power MOSFET designed for high-speed switching applications in power management circuits.This MOSFET offers low on-state resistance and fast switching speeds,making it ideal for power supply,DC-DC converter,and motor control applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source
  • P:Power(Single)-bottom view

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTJD1155LT1G MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The NTJD1155LT1G offers fast switching speeds, allowing for efficient power management in high-frequency applications.
  • Low On-State Resistance: With its low RDS(on) value, this MOSFET minimizes power loss and improves energy efficiency in switching circuits.
  • Enhanced Thermal Performance: The MOSFET is designed for improved thermal dissipation under high power conditions, enhancing reliability.
  • Low Gate Charge: The NTJD1155LT1G features a low gate charge, reducing switching losses and improving overall performance.
  • RoHS Compliant: This MOSFET is compliant with the Restriction of Hazardous Substances directive, ensuring environmental safety.

Note: For detailed technical specifications, please refer to the NTJD1155LT1G datasheet.

Application

  • Power Management: Ideal for power supply and power management circuits in various electronic devices and systems.
  • DC-DC Converters: Suitable for use in DC-DC converter modules for efficient voltage conversion.
  • Motor Control: Used in motor control applications for high-speed switching and efficient power delivery.

Functionality

The NTJD1155LT1G N-channel MOSFET is designed to provide reliable and efficient power switching capabilities for power management and motor control applications, ensuring optimal performance and energy efficiency.

Usage Guide

  • Power Supply: Connect the Drain (D) and Source (S) pins appropriately in the circuit for power transmission.
  • Gate Control: Apply the proper gate voltage to the Gate (G) pin to control the switching of the MOSFET.
  • Load Connection: Connect the load to the Drain (D) pin for efficient power delivery.

Frequently Asked Questions

Q: What is the maximum current rating of the NTJD1155LT1G?
A: The NTJD1155LT1G can handle a maximum continuous drain current as specified in the datasheet. Exceeding this rating can lead to device failure.

Q: Is the NTJD1155LT1G compatible with automotive applications?
A: Yes, the NTJD1155LT1G is suitable for automotive applications requiring high-speed switching and efficient power management due to its performance characteristics.

Equivalent

For similar functionalities, consider these alternatives to the NTJD1155LT1G:

  • NTJD1155LT1:A comparable N-channel MOSFET offering similar performance characteristics from ON Semiconductor.
  • IRF540N:This is an N-channel Power MOSFET from International Rectifier with comparable specifications and performance to the NTJD1155LT1G.

NTJD1155LT1G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity P-Channel
Configuration Level Shift V(BR)DSS Min (V) -8
VGS Max (V) 8 VGS(th) Max (V) 1
ID Max (A) 1.3 PD Max (W) 0.4
RDS(on) Max @ VGS = 2.5 V (mΩ) 170 RDS(on) Max @ VGS = 4.5 V (mΩ) 130
Qg Typ @ VGS = 4.5 V (nC) 1.3 Pricing ($/Unit) $0.1431Sample

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