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NTMFS6H800NT1G

MOSFET TRENCH 8 80V NFET POWER MOSFET

Quantity Unit Price(USD) Ext. Price
1 $4.907 $4.91
10 $4.304 $43.04
30 $3.937 $118.11
100 $3.630 $363.00

Inventory:8,952

*The price is for reference only.
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Please submit RFQ for NTMFS6H800NT1G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NTMFS6H800NT1G

The NTMFS6H800NT1G power MOSFET is engineered for performance and reliability in demanding environments. Its compact PowerPAK 1212-8 package offers low thermal resistance and high power dissipation capabilities, ensuring efficient and reliable operation. With a drain-to-source voltage rating of 30 volts and a continuous drain current of up to 79.9 amps, it is well-equipped to handle high-power loads in voltage regulators, synchronous buck converters, and motor control circuits

Key Features

  • Small Footprint (5x6 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • RoHS Compliant

Application

  • Switching power supplies
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • 48V systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5530 pF @ 40 V Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case SOIC-8
Base Product Number NTMFS6 Manufacturer onsemi
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 203 A
Rds On - Drain-Source Resistance 1.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 85 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 200 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 85 ns Forward Transconductance - Min 138 S
Product Type MOSFET Rise Time 89 ns
Factory Pack Quantity 1500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 97 ns
Typical Turn-On Delay Time 25 ns Unit Weight 0.026455 oz

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Warranty, Returns, and Additional Information

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