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NTMFS4833NT1G

Trans MOSFET N-CH 30V 28A 5-Pin SO-FL EP T/R

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Overview of NTMFS4833NT1G

MOSFET, 30V N-Channel Power MOSFET, 191A, 113.6W, 2mΩ, N−Channel, 5x6mm SO−8FL

Key Features

  • Low rDS(on) to Minimize Conduction Loss
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses

Application

  • CPU Power Delivery
  • DC−DC Converters
  • Low Side Switching

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tape & Reel (TR) Product Status Obsolete
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 16A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88 nC @ 11.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 12 V
Power Dissipation (Max) 910mW (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads Base Product Number NTMFS4833

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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