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NTMFS002P03P8ZT1G

Trans MOSFET P-CH 30V 40.2A 5-Pin SO-FL EP Reel

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Overview of NTMFS002P03P8ZT1G

MOSFET, Power -30V P-Channel, 1.7mΩ @10V, 226A, SO-8FL Package

Key Features

  • Ultra Low RDS(on)
  • Advanced Package Technology in 5x6mm
  • Pb−Free and Halogen Free/BFR Free

Application

  • Power Load Switch
  • Protection (Reverse Current, Over Voltage, and Reverse Negative Voltage)
  • Battery Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40.2A (Ta), 263A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 23A, 10V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 217 nC @ 4.5 V Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 14950 pF @ 15 V Power Dissipation (Max) 3.3W (Ta), 138.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case SO-8FL
Manufacturer onsemi Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 263 A
Rds On - Drain-Source Resistance 1.4 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 217 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 138.9 W Channel Mode Enhancement
Brand onsemi Product Type MOSFET
Factory Pack Quantity 1500 Subcategory MOSFETs

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