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NTHL082N65S3F

Trans MOSFET N-CH 650V 40A 3-Pin(3+Tab) TO-247 Tube

Quantity Unit Price(USD) Ext. Price
1 $5.249 $5.25
10 $4.637 $46.37
30 $4.266 $127.98
90 $3.953 $355.77

Inventory:7,418

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for NTHL082N65S3F or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NTHL082N65S3F

Meet the NTHL082N65S3F, a game-changing high-voltage super-junction (SJ) MOSFET from ON Semiconductor. Branded as SUPERFET III MOSFET, this innovative technology harnesses charge-balance technology to deliver exceptional low on-resistance and reduced gate charge performance. Its ability to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates makes it an ideal solution for power systems aiming for miniaturization and improved efficiency. What's more, the MOSFET's optimized reverse recovery performance of the body diode eliminates the need for additional components, ultimately enhancing system reliability

Key Features

  • 700 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 81 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • Typ. RDS(on) = 70 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

Application

  • Telecommunication
  • Cloud system
  • Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 82 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 81 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 313 W Channel Mode Enhancement
Tradename SuperFET III Series SuperFET3
Brand onsemi Configuration Single
Fall Time 5 ns Forward Transconductance - Min 24 S
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 79 ns
Typical Turn-On Delay Time 27 ns Unit Weight 0.211644 oz

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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