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NTHL040N65S3HF

MOSFET FRFET 650 V 65 A 40 mOhm TO-247

Inventory:5,778

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Overview of NTHL040N65S3HF

Utilizing charge-balance technology, the NTHL040N65S3HF SUPERFET III MOSFET from ON Semiconductor delivers outstanding low on-resistance and reduced gate charge performance. This advanced technology not only minimizes conduction loss but also provides superior switching performance, making it suitable for power systems requiring miniaturization and increased efficiency. Additionally, the MOSFET's optimized reverse recovery performance of the body diode eliminates the need for additional components, ultimately improving system reliability. With its exceptional capabilities, the NTHL040N65S3HF SUPERFET III MOSFET is a reliable choice for a wide range of power system applications

Key Features

  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 159 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1367 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 32 mΩ

Application

  • Telecommunication
  • Cloud system
  • Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 65 A
Rds On - Drain-Source Resistance 32 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 159 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 446 W Channel Mode Enhancement
Tradename SuperFET III Series SuperFET3
Brand onsemi Configuration Single
Fall Time 26 ns Forward Transconductance - Min 48 S
Product Type MOSFET Rise Time 32 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 102 ns
Typical Turn-On Delay Time 40 ns Unit Weight 0.211644 oz

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