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IRGP6690DPBF

Trans IGBT Chip N-CH 600V 140A 483W 3-Pin(3+Tab) TO-247AC Tube

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Overview of IRGP6690DPBF

The IRGP6690DPBF is a high-power IGBT designed for various power electronics applications requiring efficient and reliable switching capabilities. This IGBT features a high current rating and low saturation voltage, making it suitable for use in inverters, motor drives, and power supplies.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • C: Collector
  • G: Gate
  • VCE: Collector-Emitter Voltage
  • IC: Collector Current
  • VGE: Gate-Emitter Voltage
  • IF: Forward Current
  • VCE(ON): On-State Voltage
  • RG: Gate Resistance

Circuit Diagram

Include a circuit diagram illustrating the connection and usage of the IRGP6690DPBF IGBT for a better understanding of its application.

Key Features

  • High Power Rating: The IRGP6690DPBF offers a high power rating suitable for demanding industrial applications.
  • Low Saturation Voltage: With a low saturation voltage, this IGBT reduces power dissipation and improves efficiency.
  • Fast Switching Speed: The IRGP6690DPBF provides fast switching speeds for high-frequency applications.
  • Low Switching Losses: This IGBT minimizes switching losses, enhancing overall system performance.
  • Temperature Stability: Designed for temperature stability, ensuring reliable operation in various thermal conditions.

Note: For detailed technical specifications, please refer to the IRGP6690DPBF datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC to AC power in renewable energy systems.
  • Motor Drives: Suitable for motor drive applications in industrial machinery and electric vehicles.
  • Power Supplies: Used in power supply units to regulate and control electrical power output.

Functionality

The IRGP6690DPBF is a high-power IGBT that enables efficient switching between high and low voltages, making it essential for power conversion and control in various electronic systems.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to control the switching state of the IGBT.
  • Heat Management: Ensure proper heat sinking and cooling to maintain optimal operating temperature and prevent overheating.
  • Load Connection: Connect the collector-emitter terminals to the load with the necessary protection circuitry.

Frequently Asked Questions

Q: Can the IRGP6690DPBF be used in high-frequency applications?
A: Yes, the IRGP6690DPBF offers fast switching speeds, making it suitable for high-frequency applications requiring efficient power control.

Equivalent

For alternatives with similar features, consider these products:

  • IRG4PC50UDPBF: A high-power IGBT with comparable specifications to the IRGP6690DPBF, suitable for power electronics applications.
  • IXGHG30N60C3D1: This IGBT provides high current handling capabilities and fast switching speeds for power conversion systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247AC-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.65 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 140 A
Pd - Power Dissipation 483 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Brand Infineon Technologies
Continuous Collector Current Ic Max 140 A Gate-Emitter Leakage Current 200 nA
Height 20.7 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 400
Subcategory IGBTs Width 5.31 mm
Part # Aliases SP001533082 Unit Weight 0.197534 oz

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