• IRLR8726PBF
IRLR8726PBF

IRLR8726PBF

MOSFET 30V 1 N-CH HEXFET

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Overview of IRLR8726PBF

The IRLR8726PBF is a power MOSFET transistor designed for high-efficiency power management applications. This MOSFET features a low on-state resistance and high current-handling capability, making it suitable for use in switching regulators, motor control, and power amplification circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for turning the MOSFET on and off.
  • Drain (D): Connection to the load or power supply.
  • Source (S): Internal connection point for the MOSFET.


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRLR8726PBF MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRLR8726PBF offers low RDS(on) for minimal power loss and high efficiency in power applications.
  • High Current Rating: With its high current-handling capability, this MOSFET can manage large loads without overheating.
  • Fast Switching Speed: The IRLR8726PBF features fast switching times, enabling rapid transitions between on and off states.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring stable operation under high power conditions.
  • Robust Construction: The MOSFET is built to withstand high voltages and currents, making it reliable in demanding applications.

Note: For detailed technical specifications, please refer to the IRLR8726PBF datasheet.

Application

  • Switching Regulators: Ideal for use in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Suitable for motor drive applications where high current handling is essential.
  • Power Amplification: Used in power amplifier circuits for audio or RF signal amplification.

Functionality

The IRLR8726PBF MOSFET is a robust and efficient power transistor that enables high-performance power management in various electronic applications, ensuring reliable and stable operation.

Usage Guide

  • Gate Drive: Apply appropriate voltage levels to the gate terminal to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load or power supply to the drain terminal for power switching.
  • Heat Dissipation: Ensure proper thermal management to maintain optimal performance and reliability.

Frequently Asked Questions

Q: Is the IRLR8726PBF suitable for high-frequency switching applications?
A: Yes, the IRLR8726PBF features fast switching speed, making it suitable for high-frequency switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the IRLR8726PBF:

  • IRF7739L2TRPBF: A power MOSFET with comparable performance characteristics for power management applications.
  • IRL7833STRPBF: This MOSFET offers similar high current-handling capabilities and low resistance for power circuit designs.
  • IRF3205PBF: Another power MOSFET option with high efficiency and robust construction for power applications.

IRLR8726PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 86 A Rds On - Drain-Source Resistance 8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 15 nC
Pd - Power Dissipation 75 W Brand Infineon Technologies
Configuration Single Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 6.22 mm
Part # Aliases SP001573950 Unit Weight 0.011640 oz

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