IRLR2705TRPBF
N-type Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for use as a switch or amplifier in electronic circuits
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.497 | $0.50 |
10 | $0.445 | $4.45 |
30 | $0.418 | $12.54 |
100 | $0.394 | $39.40 |
500 | $0.331 | $165.50 |
1000 | $0.323 | $323.00 |
Inventory:4,862
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Part Number : IRLR2705TRPBF
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Package/Case : DPAK-3 (TO-252-3)
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Brands : International Rectifier
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRLR2705TRPBF DataSheet (PDF)
Overview of IRLR2705TRPBF
MOSFET, N CH, 55V, 28A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Key Features
- - Maximum drain to source breakdown voltage of 55 V.
- - Gate source threshold voltage ranges from 1 V to 2 V.
- - Typical turn-off delay time of 21 ns.
- - Packaged in TO-252-3 package.
- - Unit weight of 0.139332 oz.
- - Single n-channel enhancement mode FET.
- - Operating temperature range of -55 C.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 55 V | Id - Continuous Drain Current | 28 A |
Rds On - Drain-Source Resistance | 65 mOhms | Vgs - Gate-Source Voltage | - 16 V, + 16 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 16.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 46 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 29 ns | Forward Transconductance - Min | 11 S |
Height | 2.3 mm | Length | 6.5 mm |
Product Type | MOSFET | Rise Time | 100 ns |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | HEXFET Power MOSFET |
Typical Turn-Off Delay Time | 21 ns | Typical Turn-On Delay Time | 8.9 ns |
Width | 6.22 mm | Unit Weight | 0.011640 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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