• IRLR2705TRPBF DPAK-3 (TO-252-3)
IRLR2705TRPBF DPAK-3 (TO-252-3)

IRLR2705TRPBF

N-type Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for use as a switch or amplifier in electronic circuits

Quantity Unit Price(USD) Ext. Price
1 $0.497 $0.50
10 $0.445 $4.45
30 $0.418 $12.54
100 $0.394 $39.40
500 $0.331 $165.50
1000 $0.323 $323.00

Inventory:4,862

*The price is for reference only.
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Overview of IRLR2705TRPBF

MOSFET, N CH, 55V, 28A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

IRLR2705TRPBF

Key Features

  • - Maximum drain to source breakdown voltage of 55 V.
  • - Gate source threshold voltage ranges from 1 V to 2 V.
  • - Typical turn-off delay time of 21 ns.
  • - Packaged in TO-252-3 package.
  • - Unit weight of 0.139332 oz.
  • - Single n-channel enhancement mode FET.
  • - Operating temperature range of -55 C.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V Id - Continuous Drain Current 28 A
Rds On - Drain-Source Resistance 65 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 16.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 46 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 29 ns Forward Transconductance - Min 11 S
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 100 ns
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 8.9 ns
Width 6.22 mm Unit Weight 0.011640 oz

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