IPB180P04P4L-02
Infineon IPB180P04P4L-02 P-channel MOSFET Transistor, 180 A, 40 V, 7+Tab-Pin TO-263-7-3
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $13.041 | $13.04 |
10 | $12.086 | $120.86 |
30 | $11.219 | $336.57 |
100 | $10.463 | $1,046.30 |
Inventory:4,517
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Part Number : IPB180P04P4L-02
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Package/Case : TO-263-7
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IPB180P04P4L-02 DataSheet (PDF)
Overview of IPB180P04P4L-02
Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
Key Features
- For fast switching converters and sync. rectification
- N-channel enhancement - logic level
- 175 °C operating temperature
- Avalanche rated
- Pb-free lead plating, RoHS compliant
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IPB180P04P4L-02 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-263 |
Package Description | SMALL OUTLINE, R-PSSO-G6 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Infineon | Additional Feature | LOGIC LEVEL COMPATIBLE |
Avalanche Energy Rating (Eas) | 84 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (Abs) (ID) | 180 A | Drain Current-Max (ID) | 180 A |
Drain-source On Resistance-Max | 0.0039 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 225 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 150 W | Pulsed Drain Current-Max (IDM) | 720 A |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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