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IPP65R074C6

MOSFET N-Ch 700V 57.7A TO220-3

Inventory:7,489

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Please submit RFQ for IPP65R074C6 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPP65R074C6

DescriptionCoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.Features• Increased MOSFET dv/dt ruggedness• Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(on)*Qg• Best in class RDS(on)/package• Easy to use/drive• Pb-free plating, Halogen free mold compound• Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)Applications PFC stages and hard switching PWM stages for e.g. Computing, Server,Telecom, UPS and Solar.

Key Features

  • Extremely low losses due to very low FOM Rdson Qg and Eoss
  • Very high commutation ruggedness
  • Easy to use/drive
  • Pb-free plating, Halogenfree mold compound
  • Qualified for industrial grade applications according to JEDEC(J-STD20
  • and JESD22)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPP65R074C6 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 915 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain-source On Resistance-Max 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 151 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 57.7 A Rds On - Drain-Source Resistance 67 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 138 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 480.8 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS C6 Brand Infineon Technologies
Fall Time 4 ns Height 15.65 mm
Length 10 mm Product Type MOSFET
Rise Time 7 ns Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 56 ns Typical Turn-On Delay Time 11 ns
Width 4.4 mm Part # Aliases SP000898650 IPP65R74C6XK IPP65R074C6XKSA1
Unit Weight 0.068784 oz

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