IPD60R600E6
MOSFET N-Ch 650V 7.3A DPAK-2 CoolMOS E6
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.911 | $1.91 |
| 200 | $0.741 | $148.20 |
| 500 | $0.715 | $357.50 |
| 1000 | $0.700 | $700.00 |
Inventory:6,178
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IPD60R600E6
-
Package/Case : PG-TO252-3
-
Brands : INFINEON
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : IPD60R600E6 DataSheet (PDF)
Overview of IPD60R600E6
N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Key Features
- Static drain-source on-resistance:
- RDS(on)≤0.6Ω
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- performance and reliable operation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IPD60R600E6 | Pbfree Code | No |
| Rohs Code | Yes | Part Life Cycle Code | Not Recommended |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-252 |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 4 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 4 Weeks | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 133 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
| Drain Current-Max (Abs) (ID) | 7.3 A | Drain Current-Max (ID) | 7.3 A |
| Drain-source On Resistance-Max | 0.6 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 63 W | Pulsed Drain Current-Max (IDM) | 19 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | TIN | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
IPP60R165CP
CoolMOS CP TO220-3 technology
IPT015N10N5
Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R
IPT012N08N5
Trans MOSFET N-CH 80V 300A 9-Pin(8+Tab) HSOF T/R
IPB027N10N5
MOSFET TRENCH >=100V
IPB180P04P4L-02
Infineon IPB180P04P4L-02 P-channel MOSFET Transistor, 180 A, 40 V, 7+Tab-Pin TO-263-7-3
IPD60R180P7ATMA1
MOSFET IPD60R180P7ATMA1 by Infineon
IPB048N15N5LFATMA1
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
IPB033N10N5LFATMA1
Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R