IPD35N10S3L-26
Infineon IPD35N10S3L-26 N-channel MOSFET Transistor, 35 A, 100 V, 3-Pin TO-252
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.576 | $1.58 |
| 10 | $1.207 | $12.07 |
| 30 | $0.977 | $29.31 |
| 100 | $0.740 | $74.00 |
| 500 | $0.633 | $316.50 |
| 1000 | $0.588 | $588.00 |
Inventory:6,010
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Part Number : IPD35N10S3L-26
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Package/Case : TO-252-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IPD35N10S3L-26 DataSheet (PDF)
Overview of IPD35N10S3L-26
In summary, the IPD35N10S3L-26 is a versatile and reliable power transistor that meets the needs of modern electronic systems. With its high current and voltage ratings, low on-resistance, and efficient design, this N-channel FET is capable of driving high-power loads with minimal losses. Whether used in industrial automation, telecommunications, or consumer electronics, the IPD35N10S3L-26 excels in delivering stable and efficient power management solutions
Key Features
LOGIC LEVEL COMPATIBLE, ULTRA LOW RESISTANCESpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Infineon | Product Category | FETs - Single |
| Series | OptiMOS-T | Packaging | Reel |
| Part-Aliases | SMD/SMT | Unit-Weight | Si |
| Mounting-Style | 1 N-Channel | Tradename | 71 W |
| Package-Case | + 175 C | Technology | - 55 C |
| Number-of-Channels | 20 V | Configuration | 35 A |
| Transistor-Type | 100 V | Pd-Power-Dissipation | 26 mOhms |
| Maximum Operating Temperature | 6 ns |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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