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IPB019N08N3GATMA1

MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3

Inventory:7,362

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Overview of IPB019N08N3GATMA1

Packaged in a TO-263-3 housing, the IPB019N08N3GATMA1 guarantees efficient heat dissipation and easy installation on a PCB. Its ability to operate at temperatures up to 175°C ensures reliable functionality even in the most demanding environments. Moreover, this MOSFET is RoHS compliant, meaning that it adheres to environmental standards by being free from harmful substances

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPB019N08N3GATMA1 Pbfree Code No
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-263
Package Description SMALL OUTLINE, R-PSSO-G6 Pin Count 7
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 1430 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0019 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A Qualification Status Not Qualified
Surface Mount YES Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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