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FDZ197PZ

MOSFET P-Ch 1.5V Specified PowerTrench

Quantity Unit Price(USD) Ext. Price
1 $0.255 $0.26
200 $0.098 $19.60
500 $0.095 $47.50
1000 $0.094 $94.00

Inventory:9,333

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
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Quick Inquiry

Please submit RFQ for FDZ197PZ or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDZ197PZ

Designed on an advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Key Features

  • Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A
  • Max rDS(on) = 71 mmΩ at VGS = -2.5 V, ID= -2.0 A
  • Max rDS(on) = 79 mmΩ at VGS = -1.8 V, ID = -1.0 A
  • Max rDS(on) = 95 mmΩ at VGS = -1.5 V, ID = -1.0 A
  • Occupies only 1.5 mm2 of PCB area. Less than 50% of thearea of 2 x 2 BGA
  • Ultra-thin package: less than 0.65 mm height when mountedto PCB
  • HBM ESD protection level > 4.4 kV (Note 3)
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case WLCSP-6
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 3.8 A
Rds On - Drain-Source Resistance 68 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge -
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.9 W Channel Mode Enhancement
Tradename PowerTrench Series FDZ197PZ
Brand onsemi / Fairchild Configuration Single
Fall Time 280 ns Forward Transconductance - Min 21 S
Height 0.6 mm Length 1.5 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 5.9 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type Power Trench MOSFET Typical Turn-Off Delay Time 311 ns
Typical Turn-On Delay Time 5.8 ns Width 1 mm
Unit Weight 0.001905 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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