FDG1024NZ
These MOSFETs offer efficient power handling capabilities with a compact SC-88-6 package design, making them ideal for space-constrained PCB layouts
Inventory:6,387
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Part Number : FDG1024NZ
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Package/Case : SOT-323-6
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Brands : Onsemi
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Components Categories : FET, MOSFET Arrays
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Datesheet : FDG1024NZ DataSheet (PDF)
Overview of FDG1024NZ
This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Key Features
- Max rDS(on) = 175 mO at VGS = 4.5 V, ID = 1.2 A
- Max rDS(on) = 215 mO at VGS = 2.5 V, ID = 1.0 A
- Max rDS(on) = 270 mO at VGS = 1.8 V, ID = 0.9 A
- Max rDS(on) = 389 mO at VGS = 1.5 V, ID = 0.8 A
- HBM ESD protection level >2 kV (Note 3)
- Very low level gate drive requirements allowing operation in 1.5 V circuits (VGS(th) < 1 V)
- Very small package outline SC70-6
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-323-6 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1.2 A | Rds On - Drain-Source Resistance | 321 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 2.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 360 mW |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDG1024NZ | Brand | onsemi / Fairchild |
Configuration | Dual | Forward Transconductance - Min | 4 S |
Height | 1.1 mm | Length | 2 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Type | Power Trench MOSFET |
Typical Turn-Off Delay Time | 11 ns | Typical Turn-On Delay Time | 3.7 ns |
Width | 1.25 mm | Unit Weight | 0.000988 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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