• FDP12N60NZ TO-220-3
FDP12N60NZ TO-220-3

FDP12N60NZ

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube

Inventory:5,524

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : FDP12N60NZ

  • Package/Case : TO-220-3

  • Brands : onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FDP12N60NZ DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDP12N60NZ or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDP12N60NZ

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

FDP12N60NZ

Key Features

  • RDS(on) = 530mΩ ( Typ.)@ VGS = 10V, ID = 6A
  • Low gate charge ( Typ. 26nC)
  • Low Crss ( Typ. 12pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant

Application

  • This product is general usage and suitable for many different applications.
  • LCD / LED / PDP TV
  • Lighting
  • Uninterruptible Power Supplies

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series UniFET-II™ Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1676 pF @ 25 V Power Dissipation (Max) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220-3 Package / Case TO-220-3
Base Product Number FDP12

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

FDD4685

FDD4685

channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet
FDC6561AN

FDC6561AN

MOSFET SSOT-6 N-CH 30V
FDC6327C

FDC6327C

SuperSOT package with 6 pins
FDC604P

FDC604P

MOSFET SSOT-6 P-CH
FDG6332C

FDG6332C

Component type: Trans MOSFET
FDG1024NZ

FDG1024NZ

These MOSFETs offer efficient power handling capabilities with a compact SC-88-6 package design, making them ideal for space-constrained PCB layouts
FDS4141

FDS4141

Trans MOSFET P-CH 40V 10.8A 8-Pin SOIC T/R
FDD86252

FDD86252

Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) DPAK T/R