• packageimg
packageimg

FDT439N

Trans MOSFET N-CH 30V 6.3A 4-Pin(3+Tab) SOT-223 T/R

Inventory:6,341

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : FDT439N

  • Package/Case : SOT-223-4

  • Brands : onsemi

  • Components Categories : MOSFET

  • Datesheet : FDT439N DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDT439N or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDT439N

This N-Channel Enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

Key Features

  • 6.3 A, 30 V
    RDS(on) = 0.045 Ω @ VGS = 4.5 V
    RDS(on) = 0.058 Ω @ VGS = 2.5 V
  • Fast switching speed
  • High power and current handling capabitlity in a widely used surface mount package

Application

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Load Switch
  • Motor Drives

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-223-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 6.3 A
Rds On - Drain-Source Resistance 38 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 400 mV Qg - Gate Charge 15 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3 W Channel Mode Enhancement
Series FDT439N Brand onsemi / Fairchild
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 17 S Height 1.8 mm
Length 6.5 mm Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 4000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 6 ns Width 3.5 mm
Part # Aliases FDT439N_NL Unit Weight 0.003951 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

FDD4685

FDD4685

channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet
FDC6561AN

FDC6561AN

MOSFET SSOT-6 N-CH 30V
FDC6327C

FDC6327C

SuperSOT package with 6 pins
FDC604P

FDC604P

MOSFET SSOT-6 P-CH
FDG6332C

FDG6332C

Component type: Trans MOSFET
FDG1024NZ

FDG1024NZ

These MOSFETs offer efficient power handling capabilities with a compact SC-88-6 package design, making them ideal for space-constrained PCB layouts
FDS4141

FDS4141

Trans MOSFET P-CH 40V 10.8A 8-Pin SOIC T/R
FDP12N60NZ

FDP12N60NZ

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube