• CSD88599Q5DC VSONCLIP-22
CSD88599Q5DC VSONCLIP-22

CSD88599Q5DC

Power Block 22-Pin VSON-CLIP EP T/R

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  • Part Number : CSD88599Q5DC

  • Package/Case : VSONCLIP-22

  • Brands : TI

  • Components Categories : FETs, MOSFETsFET, MOSFET Arrays

  • Datesheet : CSD88599Q5DC DataSheet (PDF)

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Overview of CSD88599Q5DC

The CSD88599Q5DC is a NexFET™ power MOSFET featuring industry-leading low on-resistance and high efficiency. This MOSFET is designed for high-current, high-frequency applications, making it ideal for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VDD: Drain Connection
  • Rt: Thermal Resistance

Circuit Diagram

Include a circuit diagram illustrating the connections and application of the CSD88599Q5DC power MOSFET for a better understanding of its usage.

Key Features

  • Low On-Resistance: The CSD88599Q5DC offers ultra-low on-resistance, reducing conduction losses and improving efficiency.
  • High Current Capability: With its design for high-current applications, this MOSFET can handle significant power loads.
  • High Frequency Operation: Suitable for high-frequency switching applications, enabling rapid and efficient power management.
  • ESD Protection: Incorporates electrostatic discharge protection for enhanced reliability in operation.
  • Thermal Performance: The MOSFET's thermal characteristics ensure optimal heat dissipation under high power conditions.

Note: For detailed technical specifications, please refer to the CSD88599Q5DC datasheet.

Application

  • Power Management Systems: Ideal for power conversion and management systems requiring high efficiency and low on-resistance.
  • Motor Control: Suitable for motor control applications where high-current switching is necessary.
  • Switching Power Supplies: Used in high-frequency switching power supply designs for efficient power delivery.

Functionality

The CSD88599Q5DC NexFET™ power MOSFET delivers exceptional performance in power management applications, offering low on-resistance and high efficiency for reliable operation.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the driving circuit for controlling the MOSFET.
  • Drain Connection: Connect the Drain (D) pin to the load requiring power switching.
  • Source Connection: Connect the Source (S) pin to the system ground.

Frequently Asked Questions

Q: Is the CSD88599Q5DC suitable for automotive power systems?
A: Yes, the CSD88599Q5DC's high efficiency and current capability make it suitable for automotive power management applications.

Equivalent

For similar power MOSFET options, consider these alternatives to the CSD88599Q5DC:

  • CSD18534Q5A: A high-current NexFET™ MOSFET with low on-resistance and excellent thermal performance.
  • CSD97374Q4M: This power MOSFET offers high efficiency and ESD protection for demanding applications.

CSD88599Q5DC

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSON-CLIP-22
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 1.7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.4 V Qg - Gate Charge 43 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 12 W Channel Mode Enhancement
Tradename NexFET Series CSD88599Q5DC
Brand Texas Instruments Configuration Dual
Fall Time 3 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 2500
Subcategory MOSFETs Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 9 ns Unit Weight 0.003549 oz

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