• CSD19536KTT D2PAK-3 (TO-263-3)
CSD19536KTT D2PAK-3 (TO-263-3)

CSD19536KTT

CSD19536KTT is a power MOSFET from NexFET™, with N-channel configuration suitable for various applications

Quantity Unit Price(USD) Ext. Price
1 $2.753 $2.75
10 $2.396 $23.96
30 $2.171 $65.13
100 $1.942 $194.20
500 $1.838 $919.00
1000 $1.793 $1,793.00

Inventory:8,317

*The price is for reference only.
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  • Part Number : CSD19536KTT

  • Package/Case : D2PAK-3 (TO-263-3)

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD19536KTT DataSheet (PDF)

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Overview of CSD19536KTT

The CSD19536KTT is a NexFET™ power MOSFET designed for high-performance power management applications. This MOSFET offers low on-resistance and high efficiency, making it suitable for various power electronics designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD19536KTT MOSFET for a visual representation.

Key Features

  • High Efficiency: The CSD19536KTT MOSFET offers high efficiency in power management applications, reducing power losses.
  • Low On-Resistance: With low on-resistance, this MOSFET minimizes voltage drops and improves overall system performance.
  • Fast Switching Speed: The fast switching speed of the CSD19536KTT allows for rapid power control in dynamic systems.
  • Thermal Performance: This MOSFET features enhanced thermal performance to ensure reliable operation under varying load conditions.
  • Robust Design: The CSD19536KTT is designed for durability and robustness in demanding power electronics environments.

Note: For detailed technical specifications, please refer to the CSD19536KTT datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems for efficient and reliable power control.
  • Solar Inverters: Suitable for solar inverter applications for converting DC power to AC power with high efficiency.
  • Motor Drives: Used in motor drive applications for controlling the speed and direction of motors with precision.

Functionality

The CSD19536KTT NexFET™ power MOSFET is designed to provide efficient power management solutions with high performance and reliability. It is a key component in various power electronic systems for optimal power control.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the gate driver circuit for controlling the MOSFET.
  • Source Connection: Connect the source (S) pin to the ground or common reference point of the system.
  • Drain Connection: Connect the drain (D) pin to the load or power supply for current conduction.

Frequently Asked Questions

Q: Is the CSD19536KTT suitable for high-frequency switching applications?
A: Yes, the fast switching speed of the CSD19536KTT makes it suitable for high-frequency switching applications in power electronics.

Equivalent

For comparable alternatives to the CSD19536KTT, consider the following:

  • CSD18560KTT: Another NexFET™ power MOSFET with similar performance characteristics for power management applications.
  • CSD17502Q5A: A high-efficiency power MOSFET suitable for various power electronics designs and applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 272 A
Rds On - Drain-Source Resistance 2.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V Qg - Gate Charge 118 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W Channel Mode Enhancement
Tradename NexFET Series CSD19536KTT
Brand Texas Instruments Configuration Single
Fall Time 6 ns Forward Transconductance - Min 329 S
Height 4.7 mm Length 9.25 mm
Moisture Sensitive Yes Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 32 ns Typical Turn-On Delay Time 13 ns
Width 10.26 mm Unit Weight 0.077603 oz

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