CSD19532Q5B
MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.377 | $1.38 |
10 | $1.161 | $11.61 |
30 | $1.043 | $31.29 |
100 | $0.850 | $85.00 |
500 | $0.791 | $395.50 |
1000 | $0.765 | $765.00 |
Inventory:5,961
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Part Number : CSD19532Q5B
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Package/Case : WSON-8
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Brands : TI
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : CSD19532Q5B DataSheet (PDF)
The CSD19532Q5B is a NexFET power MOSFET designed for high-efficiency power management applications. This MOSFET features a low on-state resistance, high switching frequency capabilities, and robust thermal performance, making it ideal for various power supply and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CSD19532Q5B MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the CSD19532Q5B datasheet. Functionality The CSD19532Q5B NexFET MOSFET provides reliable and efficient power switching capabilities for a wide range of power management applications. It offers low resistance, high performance, and thermal reliability for optimal operation. Usage Guide Q: Can the CSD19532Q5B be used in high-frequency applications? For similar functionalities, consider these alternatives to the CSD19532Q5B:Overview of CSD19532Q5B
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the CSD19532Q5B is capable of high-frequency switching suitable for various applications requiring fast response times.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | VSON-CLIP-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 140 A |
Rds On - Drain-Source Resistance | 4.9 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.2 V | Qg - Gate Charge | 48 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 195 W | Channel Mode | Enhancement |
Tradename | NexFET | Series | CSD19532Q5B |
Brand | Texas Instruments | Configuration | Single |
Fall Time | 6 ns | Forward Transconductance - Min | 84 S |
Height | 1 mm | Length | 6 mm |
Product Type | MOSFET | Rise Time | 6 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 7 ns | Width | 5 mm |
Unit Weight | 0.003714 oz |
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