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CSD23382F4

Trans MOSFET P-CH 12V 3.5A 3-Pin PicoStar T/R

Quantity Unit Price(USD) Ext. Price
5 $0.157 $0.78
50 $0.128 $6.40
150 $0.116 $17.40
500 $0.100 $50.00
3000 $0.093 $279.00
6000 $0.088 $528.00

Inventory:5,920

*The price is for reference only.
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Please submit RFQ for CSD23382F4 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of CSD23382F4

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Key Features

  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Low profile
    • 0.36-mm maximum height
  • Integrated ESD protection diode
    • Rated > 2-kV HBM
    • Rated > 2-kV CDM
  • Pb terminal plating
  • Halogen free
  • RoHS compliant

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series CSD23382F4 Product Status Active
FET Type P-Channel Technology Si
Drain to Source Voltage (Vdss) 12 V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 76mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.35 nC @ 6 V
Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 6 V
Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 3-PICOSTAR
Package / Case PICOSTAR-3 Base Product Number CSD23382
Manufacturer Texas Instruments Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 12 V Id - Continuous Drain Current 3.5 A
Rds On - Drain-Source Resistance 76 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 500 mV Qg - Gate Charge 1.04 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW Channel Mode Enhancement
Tradename NexFET Brand Texas Instruments
Configuration Single Development Kit CSD1FPCHEVM-890
Fall Time 41 ns Forward Transconductance - Min 3.4 S
Height 0.35 mm Length 1 mm
Product Type MOSFET Rise Time 25 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 66 ns
Typical Turn-On Delay Time 28 ns Width 0.64 mm
Unit Weight 0.000014 oz

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