CSD18563Q5A
N-Channel MOSFET with 60V and 96A rating in an 8-pin SON package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.695 | $0.70 |
10 | $0.617 | $6.17 |
30 | $0.579 | $17.37 |
100 | $0.541 | $54.10 |
500 | $0.493 | $246.50 |
1000 | $0.481 | $481.00 |
Inventory:6,521
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Part Number : CSD18563Q5A
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Package/Case : VSONP (DQJ)-8
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Brands : TI
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Components Categories : Single FETs, MOSFETs
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Datesheet : CSD18563Q5A DataSheet (PDF)
Overview of CSD18563Q5A
CSD18563Q5A is a dual-channel, 36 V, 5-A, ultra-low RDS(ON) NexFET power MOSFET from Texas Instruments. It is designed for use in a wide range of applications, including power management, motor control, and load switching. This MOSFET features a typical on-state resistance of 3.5 mΩ, which allows for efficient power conversion with minimal power loss. It also has a maximum drain-source voltage rating of 36 V, making it suitable for use in high-voltage applications. In addition, the device has a high peak current capability of 50 A, allowing for reliable operation in demanding conditions.The CSD18563Q5A is designed with robust protection features, including thermal shutdown and overcurrent protection, to ensure safe and reliable operation in a variety of operating conditions. It also has a small package size and low-profile design, making it suitable for space-constrained applications.
Key Features
Application
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
VDS (V) | 60 | Configuration | Single |
Rds(on) at VGS=4.5 V (max) (mΩ) | 10.8 | Rds(on) at VGS=10 V (max) (mΩ) | 6.8 |
IDM - pulsed drain current (max) (A) | 251 | QG (typ) (nC) | 15 |
QGD (typ) (nC) | 2.9 | QGS (typ) (nC) | 3.3 |
VGS (V) | 20 | VGSTH typ (typ) (V) | 2 |
ID - silicon limited at TC=25°C (A) | 93 | ID - package limited (A) | 100 |
Logic level | Yes | Operating temperature range (°C) | -55 to 150 |
Rating | Catalog |
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