• CSD18563Q5A VSONP (DQJ)-8
CSD18563Q5A VSONP (DQJ)-8

CSD18563Q5A

N-Channel MOSFET with 60V and 96A rating in an 8-pin SON package

Quantity Unit Price(USD) Ext. Price
1 $0.695 $0.70
10 $0.617 $6.17
30 $0.579 $17.37
100 $0.541 $54.10
500 $0.493 $246.50
1000 $0.481 $481.00

Inventory:6,521

*The price is for reference only.
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Overview of CSD18563Q5A

CSD18563Q5A is a dual-channel, 36 V, 5-A, ultra-low RDS(ON) NexFET power MOSFET from Texas Instruments. It is designed for use in a wide range of applications, including power management, motor control, and load switching. This MOSFET features a typical on-state resistance of 3.5 mΩ, which allows for efficient power conversion with minimal power loss. It also has a maximum drain-source voltage rating of 36 V, making it suitable for use in high-voltage applications. In addition, the device has a high peak current capability of 50 A, allowing for reliable operation in demanding conditions.The CSD18563Q5A is designed with robust protection features, including thermal shutdown and overcurrent protection, to ensure safe and reliable operation in a variety of operating conditions. It also has a small package size and low-profile design, making it suitable for space-constrained applications.

CSD18563Q5A

Key Features

  • The CSD18563Q5A is a 100V, N-channel NexFET™ power MOSFET designed for high-performance DC-DC applications
  • Its features include low RDS(on) for higher efficiency, optimized switching performance, and a compact SON5x6 package for space-constrained designs
  • Additionally, it offers improved thermal performance and robustness for demanding applications

    • Application

  • The CSD18563Q5A is commonly used in high-frequency power conversion applications such as server power supplies, telecom equipment, and solar inverters
  • Its features, including low ON resistance and fast switching speeds, make it ideal for applications requiring high efficiency and compact designs
  • Additionally, it finds utility in motor control and battery management systems due to its high power density

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    VDS (V) 60 Configuration Single
    Rds(on) at VGS=4.5 V (max) (mΩ) 10.8 Rds(on) at VGS=10 V (max) (mΩ) 6.8
    IDM - pulsed drain current (max) (A) 251 QG (typ) (nC) 15
    QGD (typ) (nC) 2.9 QGS (typ) (nC) 3.3
    VGS (V) 20 VGSTH typ (typ) (V) 2
    ID - silicon limited at TC=25°C (A) 93 ID - package limited (A) 100
    Logic level Yes Operating temperature range (°C) -55 to 150
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