CSD18540Q5B
MOSFET 60V, N-channel NexFET Pwr MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.017 | $2.02 |
10 | $1.749 | $17.49 |
30 | $1.582 | $47.46 |
100 | $1.250 | $125.00 |
500 | $1.172 | $586.00 |
1000 | $1.137 | $1,137.00 |
Inventory:8,595
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Part Number : CSD18540Q5B
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Package/Case : VSON8
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Brands : TI
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : CSD18540Q5B DataSheet (PDF)
The CSD18540Q5B is a high-performance N-channel MOSFET designed for use in power management applications. This MOSFET features a low on-resistance and high load current capability, making it ideal for various power switching applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CSD18540Q5B MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the CSD18540Q5B datasheet. Functionality The CSD18540Q5B is a high-performance N-channel MOSFET designed for efficient power switching in a wide range of applications. Its low on-resistance and high load current capability make it an excellent choice for power management solutions. Usage Guide Q: What is the maximum load current supported by the CSD18540Q5B? Q: Is the CSD18540Q5B suitable for automotive applications? For similar functionalities, consider these alternatives to the CSD18540Q5B:Overview of CSD18540Q5B
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The CSD18540Q5B can handle high load currents, making it suitable for various power management applications requiring robust performance.
A: Yes, the CSD18540Q5B is designed to meet automotive industry standards, making it suitable for use in automotive power systems, motor drives, and other automotive electronics applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | VSON-CLIP-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 2.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V | Qg - Gate Charge | 41 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 188 W | Channel Mode | Enhancement |
Tradename | NexFET | Series | CSD18540Q5B |
Brand | Texas Instruments | Configuration | Single |
Development Kit | BOOSTXL-DRV8305EVM, DRV8704EVM | Fall Time | 3 ns |
Height | 1 mm | Length | 6 mm |
Product Type | MOSFET | Rise Time | 9 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel Power MOSFET | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 6 ns | Width | 5 mm |
Unit Weight | 0.004254 oz |
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