CSD18512Q5B
MOSFET 40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm 8-VSON-CLIP -55 to 150
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Part Number : CSD18512Q5B
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Package/Case : 8-VSON-CLIP (5x6)
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Brands : TI
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Components Categories : Single FETs, MOSFETs
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Datesheet : CSD18512Q5B DataSheet (PDF)
Overview of CSD18512Q5B
This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Key Features
- Low RDS(ON)
- Low thermal resistance
- Avalanche rated
- Logic level
- Pb-free terminal plating
- RoHS compliant
- Halogen-free
- SON 5 mm × 6 mm plastic package
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | CSD18512Q5B | Pbfree Code | Yes |
| Rohs Code | No | Part Life Cycle Code | Active |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | Package Description | SMALL OUTLINE, R-PDSO-N5 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 | Date Of Intro | 2016-12-12 |
| Samacsys Manufacturer | Texas Instruments | Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 205 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (ID) | 32 A | Drain-source On Resistance-Max | 0.0023 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 333 pF |
| JESD-30 Code | R-PDSO-N8 | JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 400 A |
| Surface Mount | YES | Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | NO LEAD | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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