• CSD17381F4 3-PICOSTAR
CSD17381F4 3-PICOSTAR

CSD17381F4

Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R

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  • Part Number : CSD17381F4

  • Package/Case : 3-PICOSTAR

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD17381F4 DataSheet (PDF)

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Overview of CSD17381F4

The CSD17381F4 is a NexFET™ Power MOSFET featuring an integrated Schottky diode. This power MOSFET is designed for high-frequency applications and offers low RDS(on) values for improved efficiency in power management circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VIN: Input Voltage
  • G: Gate
  • EN: Enable
  • OCP: Overcurrent Protection
  • VSS: Power Ground
  • AGND: Analog Ground
  • VOUT: Output Voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD17381F4 for a visual representation.

Key Features

  • High-Frequency Operation: The CSD17381F4 is optimized for high-frequency switching applications, making it suitable for power supplies and voltage regulator modules.
  • Low RDS(on): With low on-resistance values, this Power MOSFET minimizes power losses and heat generation, enhancing overall efficiency.
  • Integrated Schottky Diode: The built-in Schottky diode improves reverse current handling and provides faster switching capabilities.
  • Enhanced Thermal Performance: The package design of the CSD17381F4 ensures efficient heat dissipation, maintaining stable operation under high loads.
  • Compact Size: This Power MOSFET is available in a space-saving package, making it ideal for applications with limited board space.

Note: For detailed technical specifications, please refer to the CSD17381F4 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as DC-DC converters and voltage regulators.
  • Switching Power Supplies: Suitable for high-frequency switching power supply designs requiring efficient MOSFET switches.
  • Motor Control: Can be utilized in motor control circuits for driving and controlling motors with high efficiency.

Functionality

The CSD17381F4 NexFET™ Power MOSFET with integrated Schottky diode offers high-performance switching capabilities for power management applications, providing improved efficiency and thermal performance.

Usage Guide

  • Input Voltage: Connect the VIN pin to the input voltage source.
  • Gate Control: Apply the control signal to the G pin to switch the MOSFET on and off.
  • Enable Function: Use the EN pin to enable or disable the MOSFET as needed.

Frequently Asked Questions

Q: What is the typical operating frequency range for the CSD17381F4?
A: The CSD17381F4 is designed for high-frequency operation, typically ranging from several kHz to MHz depending on the application requirements.

Q: Does the CSD17381F4 require additional heat sinking for thermal management?
A: The CSD17381F4 features enhanced thermal performance and may not require additional heat sinking under moderate operating conditions. However, for high-power applications, proper thermal management is recommended.

Equivalent

For similar functionalities, consider these alternatives to the CSD17381F4:

  • CSD18532Q5B: Another NexFET™ Power MOSFET with enhanced features for high-frequency applications.
  • CSD97394Q4M: A Power MOSFET with integrated protection features and high efficiency performance.

CSD17381F4

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid CSD17381F4 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC Package Description CHIP CARRIER, R-XBCC-N3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.21.00.40 Samacsys Manufacturer Texas Instruments
Additional Feature ULTRA LOW RESISTANCE Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 3.1 A Drain Current-Max (ID) 3.1 A
Drain-source On Resistance-Max 0.25 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.9 pF JESD-30 Code R-XBCC-N3
JESD-609 Code e4 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material UNSPECIFIED
Package Shape RECTANGULAR Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES Terminal Finish NICKEL GOLD
Terminal Form NO LEAD Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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