CSD17578Q5A
MOSFET 30-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm 8-VSONP
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.425 | $0.42 |
10 | $0.360 | $3.60 |
30 | $0.313 | $9.39 |
100 | $0.274 | $27.40 |
500 | $0.263 | $131.50 |
1000 | $0.256 | $256.00 |
Inventory:4,005
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : CSD17578Q5A
-
Package/Case : 8-VSONP (5x6)
-
Brands : TI
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : CSD17578Q5A DataSheet (PDF)
Overview of CSD17578Q5A
This 30 V, 5.9 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Key Features
- Low Qg and Qgd
- Low RDS(on)
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5 mm × 6 mm Plastic Package
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | CSD17578Q5A | Pbfree Code | Yes |
Rohs Code | No | Part Life Cycle Code | Active |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | Package Description | SMALL OUTLINE, R-PDSO-F5 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Samacsys Manufacturer | Texas Instruments |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 23 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 16 A |
Drain-source On Resistance-Max | 0.0093 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 75 pF | JESD-30 Code | R-PDSO-N8 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 132 A | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | NO LEAD |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
CSD16301Q2
Trans MOSFET N-CH 25V 5A 6-Pin SON T/R
CSD17313Q2T
MOSFET 30V, N-Channel NexFET Power Mosfet
CSD17312Q5
MOSFET 30V N-Channel NexFET Power MOSFET
CSD17381F4
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R
CSD87381P
Power Block 5-Pin PTAB T/R
CSD18563Q5A
N-Channel MOSFET with 60V and 96A rating in an 8-pin SON package
CSD13202Q2
Trans MOSFET N-CH 12V 22A 6-Pin WSON EP T/R
CSD25480F3
MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150