• CSD17575Q3 8-VSON-CLIP (3.3x3.3)
CSD17575Q3 8-VSON-CLIP (3.3x3.3)

CSD17575Q3

MOSFET 30V, N-channel NexFET Pwr MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.765 $0.76
10 $0.639 $6.39
30 $0.576 $17.28
100 $0.514 $51.40
500 $0.418 $209.00
1000 $0.398 $398.00

Inventory:7,122

*The price is for reference only.
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  • Part Number : CSD17575Q3

  • Package/Case : 8-VSON-CLIP (3.3x3.3)

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD17575Q3 DataSheet (PDF)

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Please submit RFQ for CSD17575Q3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of CSD17575Q3

The CSD17575Q3 is a high-frequency, synchronous buck NexFET™ power block designed for portable applications. This power block integrates high-side and low-side MOSFETs to minimize losses and provide efficient power conversion.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VIN: Input voltage
  • GND: Ground connection
  • EN: Enable pin for the device
  • PG: Power Good indicator
  • SW: Switch node connection
  • VOUT: Output voltage
  • FB: Feedback pin for voltage regulation
  • BST: Bootstrap capacitor connection
  • SS/TR: Soft-start/tracking pin

Circuit Diagram

Incorporate a circuit diagram illustrating the connections and operation of the CSD17575Q3 for a visual representation.

Key Features

  • High-Frequency Operation: Designed for high-frequency operation, enabling compact designs and efficient power conversion.
  • Synchronous Buck Configuration: Integrates both high-side and low-side MOSFETs for improved efficiency and reduced losses.
  • Wide Input Voltage Range: Supports a wide input voltage range, making it suitable for various portable applications.
  • Power Good Indicator: Includes a power good indicator for monitoring the output voltage status.
  • Enable Pin: Provides an enable pin for easy control of the device.
  • Compact Size: Available in a small footprint package for space-constrained applications.

Note: For detailed technical specifications, please refer to the CSD17575Q3 datasheet.

Application

  • Portable Electronics: Ideal for use in portable electronic devices such as smartphones, tablets, and portable media players.
  • Battery-Powered Systems: Suitable for battery-powered systems requiring efficient power conversion.
  • Point-of-Load Regulation: Used in point-of-load regulation for microprocessors, FPGAs, and other digital loads.

Functionality

The CSD17575Q3 is a high-frequency, synchronous buck power block designed for efficient power conversion in portable applications. It integrates high-side and low-side MOSFETs for minimized losses and compact designs.

Usage Guide

  • Input Voltage: Connect VIN (Pin 1) to the input voltage source.
  • Output Voltage: VOUT (Pin 5) provides the regulated output voltage.
  • Enable Control: Use the EN (Pin 3) pin to enable or disable the device.

Frequently Asked Questions

Q: What is the maximum input voltage for the CSD17575Q3?
A: The CSD17575Q3 can handle a maximum input voltage as specified in the datasheet.

Q: Is the CSD17575Q3 suitable for low-power applications?
A: Yes, the CSD17575Q3 is designed for efficient power conversion, making it suitable for low-power and battery-powered applications.

Equivalent

For similar functionalities, consider these alternatives to the CSD17575Q3:

  • CSD18534Q5A: Another high-frequency, synchronous buck NexFET™ power block with similar features and performance.
  • CSD87334Q5D: This power block offers comparable performance and features, suitable for portable applications.

CSD17575Q3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid CSD17575Q3 Pbfree Code Yes
Rohs Code No Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC Package Description SMALL OUTLINE, S-PDSO-N5
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 115 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.0032 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 204 pF JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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