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CSD17483F4

Trans MOSFET N-CH 30V 1.5A 3-Pin PicoStar T/R

Quantity Unit Price(USD) Ext. Price
5 $0.099 $0.50
50 $0.080 $4.00
150 $0.070 $10.50
500 $0.063 $31.50
3000 $0.056 $168.00
6000 $0.053 $318.00

Inventory:8,690

*The price is for reference only.
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Please submit RFQ for CSD17483F4 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of CSD17483F4

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Key Features

  • Low on-resistance
  • Low Qg and Qgd
  • Low-threshold voltage
  • Ultra-small footprint (0402 case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series CSD17483F4 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V
Vgs (Max) 12V Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 15 V
Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 3-PICOSTAR
Package / Case PICOSTAR-3 Base Product Number CSD17483
Manufacturer Texas Instruments Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 1.5 A
Rds On - Drain-Source Resistance 240 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 650 mV Qg - Gate Charge 1.01 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW Channel Mode Enhancement
Tradename FemtoFET Brand Texas Instruments
Configuration Single Fall Time 3.4 ns
Forward Transconductance - Min 2.4 S Height 0.35 mm
Length 1 mm Product Type MOSFET
Rise Time 1.3 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 10.6 ns Typical Turn-On Delay Time 3.3 ns
Width 0.64 mm Unit Weight 0.000014 oz

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