BFU580GX

Name: BFU580GX
Brand: NXP
Rating: 4.5 (10 reviews)

Trans RF BJT NPN 16V 0.1A 1000mW Automotive AEC-Q101 4-Pin(3+Tab) SC-73 T/R

Inventory:9,859

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RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SC-73

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	NXP	Product Category	RF Bipolar Transistors
RoHS	Details	Series	BFU580G
Transistor Type	Bipolar Wideband	Technology	Si
Transistor Polarity	NPN	Operating Frequency	900 MHz
DC Collector/Base Gain hfe Min	60	Collector- Emitter Voltage VCEO Max	16 V
Emitter- Base Voltage VEBO	2 V	Continuous Collector Current	30 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Configuration	Single	Mounting Style	SMD/SMT
Package / Case	SOT-223-4	Brand	NXP Semiconductors
Collector- Base Voltage VCBO	24 V	DC Current Gain hFE Max	130
Gain Bandwidth Product fT	11 GHz	Maximum DC Collector Current	100 mA
Operating Temperature Range	- 40 C to + 150 C	Pd - Power Dissipation	1000 mW
Product Type	RF Bipolar Transistors	Factory Pack Quantity	1000
Subcategory	Transistors	Type	Wideband RF Transistor
Part # Aliases	934067974115	Unit Weight	0.003447 oz
Product Status	Active	Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	11GHz	Noise Figure (dB Typ @ f)	1.4dB @ 1.8GHz
Gain	10.5dB	Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 30mA, 8V	Current - Collector (Ic) (Max)	60mA
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Supplier Device Package	SC-73	Base Product Number	BFU580

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