SI4435DYTRPBF

Name: SI4435DYTRPBF
Brand: Infineon Technologies
Rating: 4.5 (10 reviews)

MOSFET HEXFET P-CH Low 0.020 Ohm -30V

Quantity	Unit Price(USD)	Ext. Price
1	$0.735	$0.74
10	$0.608	$6.08
30	$0.543	$16.29
100	$0.481	$48.10
500	$0.423	$211.50
1000	$0.405	$405.00

Inventory:6,177

*The price is for reference only.

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Part Number : SI4435DYTRPBF
Package/Case : 8-SOIC(0.154",3.90mmWidth)
Brands : Infineon Technologies
Components Categories : Single FETs, MOSFETs
Datesheet : SI4435DYTRPBF DataSheet (PDF)

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Overview of SI4435DYTRPBF

The SI4435DYTRPBF is an N-channel MOSFET transistor designed for high-frequency switching applications in power management circuits and voltage regulation systems. This MOSFET features a low on-state resistance and high switching speed, making it suitable for efficient power handling and control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

Gate (G): Control input for turning the transistor on and off
Drain (D): Output terminal for the transistor

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4435DYTRPBF MOSFET for a visual representation.

Key Features

Low On-State Resistance: The SI4435DYTRPBF offers low RDS(on) for efficient power handling.
High Switching Speed: With fast turn-on and turn-off times, this MOSFET is suitable for high-frequency applications.
High Power Dissipation: Capable of dissipating heat efficiently to handle high power levels.
Enhanced Power Management: Ideal for use in power management circuits for voltage regulation and current control.

Note: For detailed technical specifications, please refer to the SI4435DYTRPBF datasheet.

Application

Power Management Systems: Used in power management systems for efficient handling of power and voltage regulation.
Switching Circuits: Suitable for high-frequency switching applications in electronic circuits.
Voltage Regulators: Ideal for use in voltage regulator circuits for stable and controlled power output.

Functionality

The SI4435DYTRPBF N-channel MOSFET transistor is designed to efficiently switch high power loads with low resistance and high speed. It is a reliable component for power management and voltage control systems.

Usage Guide

Gate Control: Apply appropriate voltage levels to the gate terminal to control the switching of the MOSFET.
Input/Output Connections: Connect the drain and source terminals to the circuit components for effective power management.
Heat Dissipation: Ensure proper heat sinking to manage the power dissipation of the MOSFET during operation.

Frequently Asked Questions

Q: Can the SI4435DYTRPBF be used in high-frequency switching applications?
A: Yes, the SI4435DYTRPBF is designed for high-speed switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SI4435DYTRPBF:

SI4413DY: An alternative N-channel MOSFET with comparable performance characteristics.
IRF3205: This is a power MOSFET transistor suitable for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series	HEXFET®	Product Status	Active
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2320 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)	Base Product Number	SI4435

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