IRLS3036PBF
MOSFET 60V 1 N-CH HEXFET 2.4mOhms 91nC
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.218 | $2.22 |
200 | $0.858 | $171.60 |
500 | $0.829 | $414.50 |
1000 | $0.813 | $813.00 |
Inventory:7,332
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Part Number : IRLS3036PBF
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Package/Case : TO252-3
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Brands : Infineon Technologies
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRLS3036PBF DataSheet (PDF)
The IRLS3036PBF is a power MOSFET transistor designed for high-efficiency switching applications. This MOSFET features a low on-state resistance and high current capability, making it ideal for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRLS3036PBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRLS3036PBF datasheet. Functionality The IRLS3036PBF is a power MOSFET transistor that provides efficient switching control in high-current applications. It offers low resistance and fast switching speed, making it a reliable choice for power electronics. Usage Guide Q: What is the maximum current rating for the IRLS3036PBF? Q: Is the IRLS3036PBF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IRLS3036PBF:Overview of IRLS3036PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRLS3036PBF can handle a maximum continuous current of X amps.
A: Yes, the IRLS3036PBF offers fast switching speeds, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 270 A | Rds On - Drain-Source Resistance | 2.8 mOhms |
Vgs - Gate-Source Voltage | - 16 V, + 16 V | Qg - Gate Charge | 91 nC |
Pd - Power Dissipation | 380 W | Brand | Infineon Technologies |
Configuration | Single | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 6.22 mm |
Part # Aliases | SP001552894 | Unit Weight | 0.011640 oz |
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