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2N7000-G

Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag

Inventory:7,761

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Please submit RFQ for 2N7000-G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2N7000-G

2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2N7000-G Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description GREEN PACKAGE-2 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.39.00.01
Factory Lead Time 16 Weeks, 4 Days Samacsys Manufacturer Microchip
Additional Feature HIGH INPUT IMPEDANCE Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape ROUND Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON

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